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Linear TM Power MOSFET
w/Extended FBSOA
IXTN62N50L
V DSS
I D25
R DS(on)
= 500V
= 62A
≤ 100m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC
E153432
S
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
500
V
G
V DGR
V GSS
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
500
± 30
V
V
D
S
V GSM
Transient
± 40
V
G = Gate
D = Drain
I D25
I DM
I A
E AS
P D
T J
T JM
T stg
V ISOL
M d
Weight
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
50/60 Hz, RMS, t = 1minute
I ISOL ≤ 1mA, t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
62
150
80
5
800
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
A
A
A
J
W
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Fast Intrinsic Diode
Extended FBSOA
Avalanche Rated
Low R DS(ON) and Q G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
500
V
Space Savings
Applications
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 30V, V DS = 0V
3.0
5.5
± 200
V
nA
Programmable Loads
DC-DC Converters
Current Regulators
Battery Chargers
I DSS
V DS = V DSS , V GS = 0V
T J = 125 ° C
50 μ A
1 mA
DC Choppers
Temperature and Lighting
Controls
R DS(on)
V GS = 20V, I D = 0.5 ? I D25 , Note 1
100 m Ω
? 2011 IXYS CORPORATION, All Rights Reserved
DS99812A(11/11)
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